APTC80H29SCTG APTC80H29SCTG C rev 4 october, 2013 www.microsemi.com 1 C 9 out1 out2 g1s1 cr2a q1 cr1a cr3b cr1b g2s2 nt c1 cr2b q2 cr4b 0/vbus cr4a cr3a g4 g3 s3s4 q4 ntc2 q3 vbus all ratings @ t j = 25c unless otherwise specified absolute maximum ratings these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 800 v i d continuous drain current t c = 25c 15 a t c = 80c 11 i dm pulsed drain current 60 v gs gate - source voltage 30 v r dson drain - source on resistance 290 m p d maximum power dissipation t c = 25c 156 w i ar avalanche current (repetitive and non repetitive) 17 a e ar repetitive avalanche energy 0.5 mj e as single pulse avalanche energy 670 v dss = 800v r dson = 290m max @ tj = 25c i d = 15a @ tc = 25c application ? motor control ? switched mode power supplies ? uninterruptible power supplies features ? coolmos? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated ? parallel sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? kelvin source for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? internal thermistor for temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant full C bridge series & sic parallel diodes super junction mosf et power module downloaded from: http:///
APTC80H29SCTG APTC80H29SCTG C rev 4 october, 2013 www.microsemi.com 2 C 9 electrical characteristics symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v,v ds = 800v t j = 25c 25 a v gs = 0v,v ds = 800v t j = 125c 250 r ds(on) drain C source on resistance v gs = 10v, i d = 7.5a 290 m v gs ( th ) gate threshold voltage v gs = v ds , i d = 1ma 2.1 3 3.9 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 25v f = 1mhz 2254 pf c oss output capacitance 1046 c rss reverse transfer capacitance 54 q g total gate charge v gs = 10v v bus = 400v i d = 15a 91 nc q gs gate C source charge 12 q gd gate C drain charge 46 t d(on) turn-on delay time inductive switching @125c v gs = 15v v bus = 533v i d = 15a r g = 5 10 ns t r rise time 13 t d(off) turn-off delay time 83 t f fall time 35 e on turn-on switching energy inductive switching @ 25c v gs = 15v, v bus = 533v i d = 15a, r g = 5 ? 146 j e off turn-off switching energy 139 e on turn-on switching energy inductive switching @ 125c v gs = 15v, v bus = 533v i d = 15a, r g = 5 ? 255 j e off turn-off switching energy 171 r thjc junction to case thermal resistance 0.8 c/w series diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1000 v i rm maximum reverse leakage current v r =1000v 250 a i f dc forward current tc = 85c 30 a v f diode forward voltage i f = 30a 1.9 2.3 v i f = 60a 2.2 i f = 30a t j = 125c 1.7 t rr reverse recovery time i f = 30a v r = 667v di/dt = 200a/s t j = 25c 290 ns t j = 125c 390 q rr reverse recovery charge t j = 25c 670 nc t j = 125c 2350 r thjc junction to case thermal resistance 1.2 c/w downloaded from: http:///
APTC80H29SCTG APTC80H29SCTG C rev 4 october, 2013 www.microsemi.com 3 C 9 parallel diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v i rm maximum reverse leakage current v r =1200v t j = 25c 200 a t j = 150c 1000 i f dc forward current tc = 125c 10 a v f diode forward voltage i f = 10a t j = 25c 1.5 1.8 v t j = 150c 2.1 q c total capacitive charge i f = 10a, v r = 800v di/dt =100a/s 30 nc q total capacitance f = 1mhz, v r = 200v 71 pf f = 1mhz, v r = 400v 52 r thjc junction to case thermal resistance 2.7 c/w thermal and package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 c t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m5 2.5 4.7 n.m wt package weight 160 g temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTC80H29SCTG APTC80H29SCTG C rev 4 october, 2013 www.microsemi.com 4 C 9 sp4 package outline (dimensions in mm) see application note apt0501 - mounting instructions for sp4 power modules on www.microsemi.com downloaded from: http:///
APTC80H29SCTG APTC80H29SCTG C rev 4 october, 2013 www.microsemi.com 5 C 9 typical coolmos performance curve 0.9 0.7 0.5 0.3 0.1 0.05 sin g le pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse durat ion 4v 4.5v 5v 5.5v 6v 6.5v 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 i d , drain current (a) v ds , drain to source voltage (v) v gs =15&10v low voltage output characteristics t j =25c t j =125c 0 10 20 30 40 50 012345678 i d , drain current (a) v gs , gate to source voltage (v) transfert characteristics v ds > i d (on)xrds(on)max 250s pulse test @ < 0.5 duty cycle v gs =10v v gs =20v 0.8 0.9 1 1.1 1.2 1.3 1.4 0 5 10 15 20 25 30 i d , drain current (a) r ds(on) vs drain current r ds (on) drain to source on resistance normalized to v gs =10v @ 7.5a 0 2 4 6 8 10 12 14 16 25 50 75 100 125 150 i d , dc drain current (a) t c , case temperature (c) dc drain current vs case temperature downloaded from: http:///
APTC80H29SCTG APTC80H29SCTG C rev 4 october, 2013 www.microsemi.com 6 C 9 0.90 0.95 1.00 1.05 1.10 1.15 25 50 75 100 125 150 t j , junction temperature (c) bv dss , drain to source breakdown voltage (normalized) breakdown voltage vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 t j , junction temperature (c) on resistance vs temperature r ds (on), drain to source on resistance (normalized) v gs =10v i d = 7.5a 0.7 0.8 0.9 1.0 1.1 25 50 75 100 125 150 t c , case temperature (c) threshold voltage vs temperature v gs (th), threshold voltage (normalized) 100ms 1ms 100s 0 1 10 100 1 10 100 1000 i d , drain current (a) v ds , drain to source voltage (v) maximum safe operating area limited by r dson single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 0 1 02 03 04 05 0 c, capacitance (pf) v ds , drain to source voltage (v) capacitance vs drain to source voltage v ds =160v v ds =400v v ds =640v 0 2 4 6 8 10 12 14 0 2 04 06 08 01 0 0 gate charge (nc) gate charge vs gate to source voltage v gs , gate to source voltage (v) i d =15a t j =25c downloaded from: http:///
APTC80H29SCTG APTC80H29SCTG C rev 4 october, 2013 www.microsemi.com 7 C 9 td(on) td(off) 0 20 40 60 80 100 5 1 01 52 02 5 td(on) and td(off) (ns) i d , drain current (a) delay times vs current v ds =533v r g =5 ? t j =1 25 c l=100h t r t f 0 10 20 30 40 50 5 1 01 52 02 5 t r and t f (ns) i d , drain current (a) rise and fall times vs current v ds =533v r g =5 ? t j =1 25 c l=100h e on e off 0 100 200 300 400 500 5 1 01 52 02 5 eon and eoff (j) i d , drain current (a) switching energy vs current v ds =533v r g =5 ? t j =1 25 c l=100h e on e off e off 0 250 500 750 1000 1250 0 1 02 03 04 05 0 switching energy (j) gate resistance (ohms) switching energy vs gate resistance v ds =533v i d =15a t j =1 25 c l=100h hard switching zcs zvs 0 50 100 150 200 250 300 350 400 4681 01 21 4 frequency (khz) i d , drain current (a) operating frequency vs drain current v ds =533v d=50% r g =5 ? t j =1 25 c t c =75 c downloaded from: http:///
APTC80H29SCTG APTC80H29SCTG C rev 4 october, 2013 www.microsemi.com 8 C 9 typical sic diode performance curve t j =25c t j =150c 0 5 10 15 20 00.511.522.533.54 i f forward current (a) v f forward voltage (v) forward characteristics 0 50 100 150 200 250 300 350 400 1 10 100 1000 c, capacitance (pf) v r reverse voltage capacitance vs.reverse voltage d = 0.9 0.7 0.5 0.3 0.1 0.05 sin g le pulse 0 0.4 0.8 1.2 1.6 2 2.4 2.8 0.00001 0.0001 0.001 0.01 0.1 1 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse du ration coolmos? comprise a new family of transistors developed by infineon technologies ag. coolmos is a trademark of infineon technologies ag. downloaded from: http:///
APTC80H29SCTG APTC80H29SCTG C rev 4 october, 2013 www.microsemi.com 9 C 9 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclai ms any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, emp loyees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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